PartNumber | NESG2101M05-EVPW24-A | NESG2101M05-A | NESG2101M05-EVPW24 |
Description | RF Bipolar Transistors Silicon Germanium Amp. and Oscillator | RF Bipolar Transistors NPN SiGe High Freq | RF Bipolar Transistors For NESG2101M05-A Power at 2.4 GHz |
Manufacturer | Renesas Electronics | CEL | CEL |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Evaluation and Development Kits, Boards |
RoHS | N | Y | - |
Transistor Type | Bipolar | Bipolar | - |
Technology | SiGe | SiGe | - |
Transistor Polarity | NPN | - | - |
Type | RF Silicon Germanium | RF Silicon Germanium | Transistor |
Brand | Renesas Electronics | CEL | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | Transistors | Transistors | - |
Emitter Base Voltage VEBO | - | 1.5 V | - |
Continuous Collector Current | - | 35 mA | - |
Maximum Operating Temperature | - | + 150 C | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | SOT-343 | - |
Pd Power Dissipation | - | 175 mW | - |
For Use With Related Products | - | - | [email protected] |
Series | - | - | - |
Frequency | - | - | 2.4GHz |
Supplied Contents | - | - | Board |