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| PartNumber | NESG2021M05-EVNF58 | NESG2030M04-T2-A | NESG2030M04-A |
| Description | RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz | RF Bipolar Transistors NPN SiGe High Freq | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| Manufacturer | CEL | CEL | - |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
| RoHS | N | Y | - |
| Transistor Type | Bipolar | Bipolar | - |
| Technology | SiGe | SiGe | - |
| Transistor Polarity | NPN | NPN | - |
| Emitter Base Voltage VEBO | 1.5 V | 1.2 V | - |
| Continuous Collector Current | 35 mA | 0.035 A | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-343 | SOT-343 | - |
| Type | RF Silicon Germanium | RF Silicon Germanium | - |
| Brand | CEL | CEL | - |
| Pd Power Dissipation | 175 mW | 80 mW | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Configuration | - | Single | - |
| Packaging | - | Reel | - |
| Collector Base Voltage VCBO | - | 8 V | - |
| DC Current Gain hFE Max | - | 200 at 5 mA at 2 V | - |
| Operating Frequency | - | 60000 MHz | - |