NE85633-R stock, NE85633-R, NE85633-R23-A


PartNumber	NE85633-R23-A	NE85633-R24-A	NE85633-R25-A
Description	RF Bipolar Transistors NPN Silicon Amplifier and Oscillator Transistor RoHS compliant	RF Bipolar Transistors NPN High Frequency	RF Bipolar Transistors NPN High Frequency
Manufacturer	CEL	CEL	CEL
Product Category	RF Bipolar Transistors	RF Bipolar Transistors	Transistors - Bipolar (BJT) - RF
Technology	Si	Si	Si
Brand	CEL	CEL	-
Product Type	RF Bipolar Transistors	RF Bipolar Transistors	-
Subcategory	Transistors	Transistors	-
RoHS	-	Y	-
Transistor Type	-	Bipolar	NPN
Transistor Polarity	-	NPN	NPN
Collector Emitter Voltage VCEO Max	-	12 V	-
Emitter Base Voltage VEBO	-	3 V	-
Continuous Collector Current	-	0.1 A	0.1 A
Configuration	-	Single	Single
Mounting Style	-	SMD/SMT	SMD/SMT
Package / Case	-	SOT-23-3	-
Type	-	RF Bipolar Small Signal	-
Pd Power Dissipation	-	200 mW (1/5 W)	-
Factory Pack Quantity	-	1	-
Unit Weight	-	0.000282 oz	0.050717 oz
Series	-	-	-
Packaging	-	-	Bulk
Package Case	-	-	TO-236-3, SC-59, SOT-23-3
Mounting Type	-	-	Surface Mount
Supplier Device Package	-	-	SOT-23
Power Max	-	-	200mW
Current Collector Ic Max	-	-	100mA
Voltage Collector Emitter Breakdown Max	-	-	12V
DC Current Gain hFE Min Ic Vce	-	-	125 @ 20mA, 10V
Frequency Transition	-	-	7GHz
Noise Figure dB Typ f	-	-	1.1dB @ 1GHz
Gain	-	-	11.5dB
Pd Power Dissipation	-	-	0.2 W
Collector Emitter Voltage VCEO Max	-	-	12 V
Emitter Base Voltage VEBO	-	-	3 V

Search Part Number : "NE85633-R", Match & Start with "NE85633-R" - Total : 4

Fabricante	Parte #	Descripción
CEL	NE85633-R23-A	RF Bipolar Transistors NPN Silicon Amplifier and Oscillator Transistor RoHS compliant
	NE85633-R24-A	RF Bipolar Transistors NPN High Frequency
	NE85633-R25-A	RF Bipolar Transistors NPN High Frequency
	NE85633-R24-A	RF Bipolar Transistors NPN High Frequency

NE85633-R