NE85630

NE85630-R24-A vs NE85630-R25-A vs NE85630-A

 
PartNumberNE85630-R24-ANE85630-R25-ANE85630-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High Frequency
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RFTransistors - Bipolar (BJT) - RF
RoHSY--
Transistor TypeBipolarNPNNPN
TechnologySiSiSi
Transistor PolarityNPNNPNNPN
Continuous Collector Current0.1 A0.1 A0.1 A
ConfigurationSingleSingleSingle
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-323--
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation150 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Unit Weight0.002116 oz0.002116 oz0.002116 oz
Series---
Packaging-BulkBulk Alternate Packaging
Package Case-SC-70, SOT-323SC-70, SOT-323
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-323SOT-323
Power Max-150mW150mW
Current Collector Ic Max-100mA100mA
Voltage Collector Emitter Breakdown Max-12V12V
DC Current Gain hFE Min Ic Vce-125 @ 7mA, 3V40 @ 7mA, 3V
Frequency Transition-4.5GHz4.5GHz
Noise Figure dB Typ f-1.2dB @ 1GHz1.2dB @ 1GHz
Gain-9dB9dB
Pd Power Dissipation-150 mW0.150 W
Collector Emitter Voltage VCEO Max--12 V
Emitter Base Voltage VEBO--3 V
DC Collector Base Gain hfe Min--40
Fabricante Parte # Descripción RFQ
CEL
CEL
NE85630-T1-R25-A RF Bipolar Transistors NPN High Frequency
NE85630-R24-A RF Bipolar Transistors NPN High Frequency
NE85630-T1-R24-A RF Bipolar Transistors NPN High Frequency
NE85630-T1-R25-A RF Bipolar Transistors NPN High Frequency
NE85630-R24-A RF Bipolar Transistors NPN High Frequency
NE85630-T1-A Nuevo y original
NE85630-R25-A RF Bipolar Transistors NPN High Frequency
NE85630-A RF Bipolar Transistors NPN High Frequency
NE85630-T1 RF TRANS NPN 12V 4.5GHZ SOT323
NE85630 RF Bipolar Transistors NPN High Frequency
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