PartNumber | NE68033-T1B-A | NE68033-T1B-R45-A | NE68033-T1B-R44-A |
Description | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN Silicon AMP Oscilltr Transist | RF Bipolar Transistors NPN Silicon AMP Oscilltr Transist |
Manufacturer | CEL | CEL | CEL |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF |
RoHS | Y | Y | - |
Transistor Type | Bipolar | Bipolar | NPN |
Technology | Si | Si | Si |
Transistor Polarity | NPN | - | - |
Collector Emitter Voltage VCEO Max | 10 V | - | - |
Emitter Base Voltage VEBO | 1.5 V | - | - |
Continuous Collector Current | 0.035 A | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Configuration | Single | Single | Single |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Packaging | Reel | Reel | Tape & Reel (TR) |
DC Current Gain hFE Max | 250 | - | - |
Height | 1.1 mm | - | - |
Length | 2.9 mm | - | - |
Operating Frequency | 2 GHz | - | - |
Type | RF Bipolar Small Signal | RF Bipolar Small Signal | - |
Width | 1.5 mm | - | - |
Brand | CEL | CEL | - |
Gain Bandwidth Product fT | 10 GHz | - | - |
Pd Power Dissipation | 200 mW (1/5 W) | - | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | 2SC3585-T1B-A | - | - |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.050717 oz |
Series | - | - | - |
Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | SOT-23 |
Power Max | - | - | 200mW |
Current Collector Ic Max | - | - | 35mA |
Voltage Collector Emitter Breakdown Max | - | - | 10V |
DC Current Gain hFE Min Ic Vce | - | - | 80 @ 10mA, 6V |
Frequency Transition | - | - | 10GHz |
Noise Figure dB Typ f | - | - | 1.8dB @ 2GHz |
Gain | - | - | 9dB |