NE68033-T

NE68033-T1B-A vs NE68033-T1B-R45-A vs NE68033-T1B-R44-A

 
PartNumberNE68033-T1B-ANE68033-T1B-R45-ANE68033-T1B-R44-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN Silicon AMP Oscilltr TransistRF Bipolar Transistors NPN Silicon AMP Oscilltr Transist
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF
RoHSYY-
Transistor TypeBipolarBipolarNPN
TechnologySiSiSi
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max10 V--
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current0.035 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingleSingleSingle
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3SOT-23-3-
PackagingReelReelTape & Reel (TR)
DC Current Gain hFE Max250--
Height1.1 mm--
Length2.9 mm--
Operating Frequency2 GHz--
TypeRF Bipolar Small SignalRF Bipolar Small Signal-
Width1.5 mm--
BrandCELCEL-
Gain Bandwidth Product fT10 GHz--
Pd Power Dissipation200 mW (1/5 W)--
Product TypeRF Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # Aliases2SC3585-T1B-A--
Unit Weight0.000282 oz0.000282 oz0.050717 oz
Series---
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23
Power Max--200mW
Current Collector Ic Max--35mA
Voltage Collector Emitter Breakdown Max--10V
DC Current Gain hFE Min Ic Vce--80 @ 10mA, 6V
Frequency Transition--10GHz
Noise Figure dB Typ f--1.8dB @ 2GHz
Gain--9dB
Fabricante Parte # Descripción RFQ
CEL
CEL
NE68033-T1B-A RF Bipolar Transistors NPN High Frequency
NE68033-T1B-R45-A RF Bipolar Transistors NPN Silicon AMP Oscilltr Transist
NE68033-T1B-R45-A RF Bipolar Transistors NPN Silicon AMP Oscilltr Transist
NE68033-T1B-R44-A RF Bipolar Transistors NPN Silicon AMP Oscilltr Transist
NE68033-T1B-A Nuevo y original
NE68033-T1-A Nuevo y original
NE68033-T1B RF Bipolar Transistors NPN High Frequency
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