NDF10N60Z

NDF10N60ZG-001 vs NDF10N60ZH vs NDF10N60ZG

 
PartNumberNDF10N60ZG-001NDF10N60ZHNDF10N60ZG
DescriptionMOSFET NFET TO220FP 600V 10MOSFET NFET 600V 10AIGBT Transistors MOSFET NFET T0220FP 600V 10A .65
ManufacturerON SemiconductorON SemiconductorON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiMOSFET (Metal Oxide)
PackagingTubeTubeTube
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Mounting Style-Through Hole-
Package / Case-TO-220-3TO-220-3 Full Pack
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-600 V-
Id Continuous Drain Current-10 A-
Rds On Drain Source Resistance-650 mOhms-
Vgs Gate Source Voltage-30 V-
Qg Gate Charge-47 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-39 W-
Configuration-Single-
Transistor Type-1 N-Channel-
Forward Transconductance Min-7.9 S-
Fall Time-23 ns-
Rise Time-31 ns-
Unit Weight-0.211644 oz-
Series---
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--600V
Current Continuous Drain (Id) @ 25°C--10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--4.5V @ 100A
Gate Charge (Qg) (Max) @ Vgs--68nC @ 10V
Vgs (Max)--±30V
Input Capacitance (Ciss) (Max) @ Vds--1645pF @ 25V
FET Feature---
Power Dissipation (Max)--39W (Tc)
Rds On (Max) @ Id, Vgs--750 mOhm @ 5A, 10V
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-220FP
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
NDF10N60ZG-001 MOSFET NFET TO220FP 600V 10
NDF10N60ZH MOSFET NFET 600V 10A
NDF10N60ZG IGBT Transistors MOSFET NFET T0220FP 600V 10A .65
NDF10N60ZG-001 MOSFET N-CH 600V 10A TO-220FP
NDF10N60ZH MOSFET N-CH 600V 10A TO-220FP
NDF10N60Z Nuevo y original
NDF10N60ZG,NDF04N60ZG, Nuevo y original
NDF10N60ZU Nuevo y original
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