PartNumber | NDD04N50Z-1G | NDD04N50ZT4G | NDD04N60Z-1G |
Description | MOSFET 600V 3A HV MOSFET IPAK | MOSFET 500V 3A HV MOSFET DPAK | MOSFET N-CH 600V 4A IPAK |
Manufacturer | ON Semiconductor | ON Semiconductor | ON |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | SMD/SMT | Through Hole |
Package / Case | TO-247-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
Id Continuous Drain Current | 3 A | 3 A | - |
Rds On Drain Source Resistance | 2.7 Ohms | 2.7 Ohms | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 61 W | 61 W | - |
Configuration | Single | Single | Single |
Packaging | Tube | Reel | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 75 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Package Case | - | - | IPAK-3 |
Pd Power Dissipation | - | - | 83 W |
Id Continuous Drain Current | - | - | 4.1 A |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
Rds On Drain Source Resistance | - | - | 1.8 Ohms |
Qg Gate Charge | - | - | 19 nC |
Forward Transconductance Min | - | - | 3.3 S |