MUN5113T

MUN5113T1G vs MUN5113T1(GC) vs MUN5113T1G , DSA300100L

 
PartNumberMUN5113T1GMUN5113T1(GC)MUN5113T1G , DSA300100L
DescriptionBipolar Transistors - Pre-Biased SS BR XSTR PNP 50V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSC-70/SOT-323-3--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation310 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMUN5113--
PackagingReel--
DC Current Gain hFE Max80--
Height0.85 mm--
Length2.1 mm--
Width1.24 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
Fabricante Parte # Descripción RFQ
MUN5113T1G Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V
MUN5113T3G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MUN5113T1(GC) Nuevo y original
MUN5113T1G , DSA300100L Nuevo y original
MUN5113T3 Nuevo y original
ON Semiconductor
ON Semiconductor
MUN5113T1 Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MUN5113T1 TRANS PREBIAS PNP 202MW SC70-3
MUN5113T3G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MUN5113T1G Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V
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