MSB92AW

MSB92AWT1G vs MSB92AWT1 vs MSB92AWT1 , D3S4M

 
PartNumberMSB92AWT1GMSB92AWT1MSB92AWT1 , D3S4M
DescriptionBipolar Transistors - BJT 500mA 300V PNPBipolar Transistors - BJT 500mA 300V PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-70-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 300 V--
Collector Base Voltage VCBO- 300 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.5 V- 0.5 V-
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT50 MHz50 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMSB92AWMSB92AW-
Height0.85 mm--
Length2.1 mm--
PackagingReelReel-
Width1.24 mm--
BrandON Semiconductor--
Continuous Collector Current0.5 A0.5 A-
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000219 oz0.000219 oz-
Package Case-SC-70-3-
Pd Power Dissipation-150 mW-
Collector Emitter Voltage VCEO Max-- 300 V-
Collector Base Voltage VCBO-- 300 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-120-
Fabricante Parte # Descripción RFQ
MSB92AWT1G Bipolar Transistors - BJT 500mA 300V PNP
MSB92AWT1 Bipolar Transistors - BJT 500mA 300V PNP
MSB92AWT1 , D3S4M Nuevo y original
ON Semiconductor
ON Semiconductor
MSB92AWT1G Bipolar Transistors - BJT 500mA 300V PNP
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