MRF8S18120HS

MRF8S18120HSR3 vs MRF8S18120HS vs MRF8S18120HSR

 
PartNumberMRF8S18120HSR3MRF8S18120HSMRF8S18120HSR
DescriptionRF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
ManufacturerNXP-NXP / Freescale
Product CategoryRF MOSFET Transistors-Transistors - FETs, MOSFETs - Single
RoHSY--
Transistor PolarityN-Channel-N-Channel
TechnologySi-Si
Id Continuous Drain Current800 mA--
Vds Drain Source Breakdown Voltage- 500 mV, 65 V--
Gain18.2 dB-18.2 dB
Output Power72 W-72 W
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseNI-780--
PackagingReel-Reel
ConfigurationSingle--
Operating Frequency1.805 GHz to 1.88 GHz-1.805 GHz to 1.88 GHz
SeriesMRF8S18120H-MRF8S18120H
TypeRF Power MOSFET-RF Power MOSFET
BrandNXP / Freescale--
Number of Channels1 Channel-1 Channel
Product TypeRF MOSFET Transistors--
Factory Pack Quantity250--
SubcategoryMOSFETs--
Vgs Gate Source Voltage10 V--
Vgs th Gate Source Threshold Voltage1.8 V--
Part # Aliases935310108128--
Unit Weight0.168010 oz-0.168010 oz
Package Case--NI-780
Vgs Gate Source Voltage--10 V
Id Continuous Drain Current--800 mA
Vds Drain Source Breakdown Voltage--- 500 mV + 65 V
Vgs th Gate Source Threshold Voltage--1.8 V
Fabricante Parte # Descripción RFQ
NXP / Freescale
NXP / Freescale
MRF8S18120HSR3 RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
MRF8S18120HSR5 RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
MRF8S18120HS Nuevo y original
MRF8S18120HSR Nuevo y original
NXP Semiconductors
NXP Semiconductors
MRF8S18120HSR5 FET RF 65V 1.81GHZ NI-780S
MRF8S18120HSR3 FET RF 65V 1.81GHZ NI-780S
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