PartNumber | MRF6V13250HSR3 | MRF6V13250HR3 | MRF6V13250H |
Description | RF MOSFET Transistors VHV6 250W 50V NI780HS | RF MOSFET Transistors VHV6 250W 50V NI780H | |
Manufacturer | NXP | NXP | NXP / Freescale |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 120 V | 120 V | - |
Gain | 20 dB | 20 dB | 20 dB |
Output Power | 230 W | 230 W | 230 W at Peak |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | NI-780S | NI-780 | - |
Packaging | Reel | Reel | Reel |
Configuration | Single | Single | - |
Operating Frequency | 1.3 GHz | 1.3 GHz | 1.3 GHz |
Series | MRF6V13250H | - | MRF6V13250H |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Brand | NXP / Freescale | NXP / Freescale | - |
Pd Power Dissipation | 476 W | 476 W | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 250 | 250 | - |
Subcategory | MOSFETs | MOSFETs | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Vgs th Gate Source Threshold Voltage | 2.7 V | 2.7 V | - |
Unit Weight | 0.168010 oz | 0.226635 oz | 0.226635 oz |
Package Case | - | - | NI-780 |
Pd Power Dissipation | - | - | 476 W |
Vgs Gate Source Voltage | - | - | 10 V |
Vds Drain Source Breakdown Voltage | - | - | 120 V |
Vgs th Gate Source Threshold Voltage | - | - | 2.7 V |