MMUN2132

MMUN2132LT1G vs MMUN2132LT1 vs MMUN2132LT1G-CUT TAPE

 
PartNumberMMUN2132LT1GMMUN2132LT1MMUN2132LT1G-CUT TAPE
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNPBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min15--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation246 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMUN2132L--
PackagingReel--
DC Current Gain hFE Max15--
Height0.94 mm--
Length2.9 mm--
Width1.3 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Fabricante Parte # Descripción RFQ
MMUN2132LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2132LT1 Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2132RLT1 Nuevo y original
MMUN2132LT1G-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
MMUN2132LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
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