MMUN2111L

MMUN2111LT1G vs MMUN2111LT vs MMUN2111LT1G A6A

 
PartNumberMMUN2111LT1GMMUN2111LTMMUN2111LT1G A6A
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min35--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation246 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMUN2111L--
PackagingReel--
DC Current Gain hFE Max35--
Height0.94 mm--
Length2.9 mm--
Width1.3 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.049384 oz--
Fabricante Parte # Descripción RFQ
MMUN2111LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2111LT3G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2111LT Nuevo y original
MMUN2111LT1G A6A Nuevo y original
MMUN2111LT3 Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2111L__G Nuevo y original
MMUN2111LT1G-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
MMUN2111LT1 Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2111LT1 TRANS PREBIAS PNP 246MW SOT23-3
MMUN2111LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2111LT3G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
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