MMDF3N02

MMDF3N02HDR2 vs MMDF3N02HD vs MMDF3N02HDR2G

 
PartNumberMMDF3N02HDR2MMDF3N02HDMMDF3N02HDR2G
DescriptionMOSFET 20V 3A N-Channel3.8 A, 20 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFETMOSFET P-CH 20V 3.8A 8-SOIC
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSN--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance90 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length5 mm--
Transistor Type2 N-Channel--
TypeMOSFET--
Width4 mm--
BrandON Semiconductor--
Forward Transconductance Min3.88 S--
Fall Time20 ns, 21 ns--
Product TypeMOSFET--
Rise Time58 ns, 32 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns, 27 ns--
Typical Turn On Delay Time11 ns, 7 ns--
Unit Weight0.006596 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
MMDF3N02HDR2 MOSFET 20V 3A N-Channel
MMDF3N02HDR2 MOSFET N-CH 20V 3.8A 8-SOIC
MMDF3N02HDR2G MOSFET P-CH 20V 3.8A 8-SOIC
MMDF3N02HD 3.8 A, 20 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
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