 |  |  | |
| PartNumber | MKI50-06A7T | MKI50-06A7 | MKI50-12 E7 |
| Description | Discrete Semiconductor Modules 50 Amps 600V | IGBT Modules 50 Amps 600V | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Series | MKI50 | MKI50 | - |
| Packaging | Bulk | Bulk | - |
| Brand | IXYS | IXYS | - |
| Product Type | Discrete Semiconductor Modules | IGBT Modules | - |
| Factory Pack Quantity | 6 | 6 | - |
| Subcategory | Discrete Semiconductor Modules | IGBTs | - |
| Product | - | IGBT Silicon Modules | - |
| Configuration | - | Quad | - |
| Collector Emitter Voltage VCEO Max | - | 600 V | - |
| Collector Emitter Saturation Voltage | - | 600 V | - |
| Continuous Collector Current at 25 C | - | 72 A | - |
| Gate Emitter Leakage Current | - | 200 nA | - |
| Pd Power Dissipation | - | 225 W | - |
| Package / Case | - | E2-12 | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Height | - | 17 mm | - |
| Length | - | 107.5 mm | - |
| Width | - | 45 mm | - |
| Mounting Style | - | Chassis Mount | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
MKI50-06A7T | Discrete Semiconductor Modules 50 Amps 600V | |
| MKI50-06A7 | IGBT Modules 50 Amps 600V | ||
| MKI50-12F7 | IGBT Modules 50 Amps 1200V | ||
| MKI50-12 E7 | Nuevo y original | ||
| MKI50-12E7 | MOD IGBT H-BRIDGE 1200V 90A E2 | ||
| MKI50-06A7T | Discrete Semiconductor Modules 50 Amps 600V | ||
| MKI50-12F7 | IGBT Modules 50 Amps 1200V | ||
| MKI50-06A7 | IGBT Modules 50 Amps 600V |