MJE5731 stock, MJE5731, MJE5731AG


PartNumber	MJE5731AG	MJE5731	MJE5731A
Description	Bipolar Transistors - BJT BIP PNP 1A 375V	Bipolar Transistors - BJT 1A 350V 40W PNP	Bipolar Transistors - BJT 1A 375V 40W PNP
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	N	N
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Transistor Polarity	PNP	PNP	PNP
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	375 V	350 V	375 V
Collector Base Voltage VCBO	350 V	350 V	350 V
Emitter Base Voltage VEBO	5 V	5 V	5 V
Maximum DC Collector Current	1 A	1 A	1 A
Gain Bandwidth Product fT	10 MHz	10 MHz	10 MHz
Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	MJE5731A	-	-
Height	15.75 mm	9.28 mm (Max)	9.28 mm (Max)
Length	10.53 mm	10.28 mm (Max)	10.28 mm (Max)
Packaging	Tube	Tube	Tube
Width	4.83 mm	4.82 mm (Max)	4.82 mm (Max)
Brand	ON Semiconductor	ON Semiconductor	ON Semiconductor
DC Collector/Base Gain hfe Min	30	30	30
Pd Power Dissipation	40000 mW	40 W	40 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	50	50	50
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.211644 oz	0.211644 oz	0.211644 oz
Collector Emitter Saturation Voltage	-	1 V	1 V
Continuous Collector Current	-	1 A	1 A

Search Part Number : "MJE5731", Match & Start with "MJE5731" - Total : 9

Fabricante	Parte #	Descripción
	MJE5731AG	Bipolar Transistors - BJT BIP PNP 1A 375V
	MJE5731G	Bipolar Transistors - BJT 1A 350V 40W PNP
	MJE5731G-CUT TAPE	Nuevo y original
ON Semiconductor	MJE5731	Bipolar Transistors - BJT 1A 350V 40W PNP
	MJE5731A	Bipolar Transistors - BJT 1A 375V 40W PNP
	MJE5731	TRANS PNP 350V 1A TO-220AB
	MJE5731A	TRANS PNP 375V 1A TO220AB
	MJE5731G	Bipolar Transistors - BJT 1A 350V 40W PNP
	MJE5731AG	Bipolar Transistors - BJT BIP PNP 1A 375V

MJE5731