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| PartNumber | MJD127G | MJD127G/MJD122G |
| Description | Darlington Transistors 8A 100V Bipolar Power PNP | |
| Manufacturer | ON Semiconductor | ON/FAI |
| Product Category | Darlington Transistors | IC Chips |
| RoHS | Y | - |
| Configuration | Single | - |
| Transistor Polarity | PNP | - |
| Collector Emitter Voltage VCEO Max | 100 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Base Voltage VCBO | 100 V | - |
| Maximum DC Collector Current | 8 A | - |
| Maximum Collector Cut off Current | 10 uA | - |
| Pd Power Dissipation | 20 W | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-252-3 (DPAK) | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | MJD127 | - |
| Packaging | Tube | - |
| Height | 2.38 mm | - |
| Length | 6.73 mm | - |
| Width | 6.22 mm | - |
| Brand | ON Semiconductor | - |
| Continuous Collector Current | 8 A | - |
| DC Collector/Base Gain hfe Min | 100, 1000 | - |
| Product Type | Darlington Transistors | - |
| Factory Pack Quantity | 75 | - |
| Subcategory | Transistors | - |
| Unit Weight | 0.023457 oz | - |