MJ15022

MJ15022G vs MJ15022 vs MJ15022/B

 
PartNumberMJ15022GMJ15022MJ15022/B
DescriptionBipolar Transistors - BJT 16A 200V 250W NPNPOWER TRANSISTOR, NPN, 200V, TO-3, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:200V, Transition Frequency ft:4MHz, Power Dissipation Pd:250W, DC Collector Current:16A, DC Current
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-204-2--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max200 V--
Collector Base Voltage VCBO350 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.4 V--
Maximum DC Collector Current16 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJ15022--
Height8.51 mm--
Length39.37 mm--
PackagingTray--
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current16 A--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation250 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.415986 oz--
Fabricante Parte # Descripción RFQ
MJ15022G Bipolar Transistors - BJT 16A 200V 250W NPN
MJ15022 POWER TRANSISTOR, NPN, 200V, TO-3, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:200V, Transition Frequency ft:4MHz, Power Dissipation Pd:250W, DC Collector Current:16A, DC Current
MJ15022/B Nuevo y original
ON Semiconductor
ON Semiconductor
MJ15022G Bipolar Transistors - BJT 16A 200V 250W NPN
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