 |  | | |
| PartNumber | MCH6660-TL-E | MCH6660-TL-H | MCH6660-TL-W |
| Description | MOSFET N/P-CH 20V 2A/1.5A MCPH6 | MOSFET N/P-CH 20V 2A/1.5A MCPH6 | |
| Manufacturer | - | ON Semiconductor | - |
| Product Category | - | FETs - Arrays | - |
| Series | - | MCH6660 | - |
| Packaging | - | Tape & Reel (TR) | - |
| Unit Weight | - | 0.000265 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | 6-SMD, Flat Leads | - |
| Technology | - | Si | - |
| Operating Temperature | - | 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | 6-MCPH | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 800mW | - |
| Transistor Type | - | 1 N-Channel 1 P-Channel | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 128pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 2A, 1.5A | - |
| Rds On Max Id Vgs | - | 136 mOhm @ 1A, 4.5V | - |
| Vgs th Max Id | - | - | - |
| Gate Charge Qg Vgs | - | 1.8nC @ 4.5V | - |
| Pd Power Dissipation | - | 800 mW | - |
| Id Continuous Drain Current | - | 2 A - 1.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 136 mOhms 266 mOhms | - |
| Transistor Polarity | - | N-Channel P-Channel | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| MCH6664-TL-W | MOSFET PCH 1.5A 30V SOT-363 | ||
| MCH6661-TL-W | MOSFET NCH 1.7A 30V SOT-363 | ||
| MCH6660-TL-E | Nuevo y original | ||
ON Semiconductor |
MCH6660-TL-H | MOSFET N/P-CH 20V 2A/1.5A MCPH6 | |
| MCH6660-TL-W | MOSFET N/P-CH 20V 2A/1.5A MCPH6 | ||
| MCH6661-TL-W | MOSFET 2N-CH 30V 1.8A SOT363 | ||
| MCH6662-TL-H | MOSFET 2N-CH 20V 2A MCPH6 | ||
| MCH6662-TL-W | MOSFET 2N-CH 20V 2A MCPH6 | ||
| MCH6663-TL-H | MOSFET N/P-CH 30V 1.8/1.5A MCPH6 | ||
| MCH6663-TL-W | MOSFET N/P-CH 30V 1.8/1.5A MCPH6 | ||
| MCH6664-TL-W | MOSFET 2P-CH 30V 1.5A SOT363 |