MAT0

MAT03EH vs MAT03EHZ vs MAT03FH

 
PartNumberMAT03EHMAT03EHZMAT03FH
DescriptionBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANSBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANSBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
ManufacturerAnalog Devices Inc.Analog Devices Inc.Analog Devices Inc.
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTIC Chips
RoHSNY-
Package / CaseTO-78-6TO-78-6-
Transistor PolarityPNPPNPPNP
ConfigurationDualDualDual
Collector Emitter Voltage VCEO Max36 V36 V-
Collector Base Voltage VCBO36 V36 V-
Collector Emitter Saturation Voltage100 mV100 mV100 mV
Maximum DC Collector Current20 mA20 mA20 mA
Gain Bandwidth Product fT190 MHz190 MHz190 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 125 C+ 125 C+ 125 C
SeriesMAT03MAT03MAT03
Height4.7 mm (Max)4.7 mm (Max)-
Length9.4 mm (Max)9.4 mm (Max)-
PackagingBulkBulkTube
Width9.4 mm (Max)9.4 mm (Max)-
BrandAnalog DevicesAnalog Devices-
DC Collector/Base Gain hfe Min80 at 10 uA, 36 V80 at 10 uA, 36 V-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity100100-
SubcategoryTransistorsTransistors-
Package Case--TO-78-6 Metal Can
Mounting Type--Through Hole
Supplier Device Package--TO-78-6
Power Max--500mW
Transistor Type--2 PNP (Dual)
Current Collector Ic Max--20mA
Voltage Collector Emitter Breakdown Max--36V
DC Current Gain hFE Min Ic Vce---
Vce Saturation Max Ib Ic--100mV @ 100μA, 1mA
Current Collector Cutoff Max---
Frequency Transition--190MHz
Collector Emitter Voltage VCEO Max--36 V
Collector Base Voltage VCBO--36 V
DC Collector Base Gain hfe Min--60 at 10 uA 36 V
Fabricante Parte # Descripción RFQ
Analog Devices Inc.
Analog Devices Inc.
MAT03EH Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
MAT03EHZ Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
MAT03FHZ Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
MAT03EHZ Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
MAT03EH Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
MAT03FH Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
MAT03FHZ Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
MAT02FHZ Nuevo y original
MAT02GH Nuevo y original
MAT03-913L Nuevo y original
MAT0308CPS Nuevo y original
MAT0315017 Nuevo y original
MAT0352008 Nuevo y original
MAT03AH/883 Nuevo y original
MAT03AH/883B Nuevo y original
MAT03ARC/883 Nuevo y original
MAT03GBC Nuevo y original
MAT04 Nuevo y original
MAT04-F Nuevo y original
MAT0404T4 Nuevo y original
MAT04AY/883B Nuevo y original
MAT04F Nuevo y original
MAT04F/FS Nuevo y original
MAT04FP Nuevo y original
MAT04FP, Nuevo y original
MAT04FPZ Nuevo y original
MAT04FPZ-MAT04FP Nuevo y original
MAT04FS Bipolar Junction Transistor, Array, Independent, SO
MAT04FS-REEL Nuevo y original
MAT04FSR Nuevo y original
MAT04FSZ Nuevo y original
MAT04FSZ-REEL Nuevo y original
MAT04FSZTR Nuevo y original
MAT04FZ Nuevo y original
MAT04S Nuevo y original
MAT04T Nuevo y original
MAT0506005 Nuevo y original
MAT0909015 Nuevo y original
MAT02H/883 Nuevo y original
MAT03AH Small Signal Bipolar Transistor, 0.02A I(C), 36V V(BR)CEO, 2-Element, PNP, Silicon, TO-78
MAT03AH/883C Small Signal Bipolar Transistor, 0.02A I(C), 36V V(BR)CEO, 2-Element, PNP, Silicon, TO-78
MAT03ARC/883C HI-SPEED DUAL PNP TRANS-LEV.B
MAT04AY Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon
MAT04BY Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon
MAT04EY Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon
MAT04FY Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon
MAT0502003 Nuevo y original
MAT0505002 Nuevo y original
MAT0752012 Nuevo y original
MAT060-B100K-231-A01 Motion & Position Sensors Industrial Motion & Position Sensors Position Senso
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