KSE21

KSE210STU vs KSE210 vs KSE210STSTU

 
PartNumberKSE210STUKSE210KSE210STSTU
DescriptionBipolar Transistors - BJT PNP Si Transistor Epitaxial
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-126-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 25 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 8 V--
Collector Emitter Saturation Voltage- 1.8 V--
Maximum DC Collector Current5 A--
Gain Bandwidth Product fT65 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesKSE210--
DC Current Gain hFE Max180--
Height11 mm--
Length8 mm--
PackagingTube--
Width3.25 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 5 A--
DC Collector/Base Gain hfe Min45--
Pd Power Dissipation15 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1920--
SubcategoryTransistors--
Unit Weight0.026843 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KSE210STU Bipolar Transistors - BJT PNP Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
KSE210STU Bipolar Transistors - BJT PNP Si Transistor Epitaxial
KSE210 Nuevo y original
KSE210STSTU Nuevo y original
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