KSD261C stock, KSD261C, KSD261CYTA


PartNumber	KSD261CGTA	KSD261CGBU	KSD261CYBU
Description	Bipolar Transistors - BJT NPN Epitaxial Transistor	Bipolar Transistors - BJT NPN Epitaxial Sil	TRANS NPN 20V 0.5A TO-92
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-92-3 Kinked Lead	TO-92-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	20 V	20 V	-
Collector Base Voltage VCBO	40 V	40 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	0.18 V	0.18 V	-
Maximum DC Collector Current	0.5 A	0.5 A	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	KSD261	-	-
DC Current Gain hFE Max	400	400	-
Height	4.7 mm	4.58 mm	-
Length	4.7 mm	4.58 mm	-
Packaging	Ammo Pack	Bulk	-
Width	3.93 mm	3.86 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
DC Collector/Base Gain hfe Min	120	120	-
Pd Power Dissipation	500 mW	500 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	2000	1000	-
Subcategory	Transistors	Transistors	-
Part # Aliases	KSD261CGTA_NL	-	-
Unit Weight	0.008466 oz	0.008466 oz	-

Search Part Number : "KSD261C", Match & Start with "KSD261C" - Total : 9

Fabricante	Parte #	Descripción
ON Semiconductor / Fairchild	KSD261CYTA	Bipolar Transistors - BJT NPN Epitaxial Transistor
	KSD261CGTA	Bipolar Transistors - BJT NPN Epitaxial Transistor
	KSD261CGBU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor	KSD261CGBU	TRANS NPN 20V 0.5A TO-92
	KSD261CGTA	TRANS NPN 20V 0.5A TO-92
	KSD261CYBU	TRANS NPN 20V 0.5A TO-92
	KSD261CYTA	TRANS NPN 20V 0.5A TO-92
	KSD261CGTA_Q	Bipolar Transistors - BJT NPN Epitaxial Transisto
	KSD261C YTA	Nuevo y original

KSD261C