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KSA1156O

KSA1156OS vs KSA1156OSTSTU vs KSA1156OSTU

 
PartNumberKSA1156OSKSA1156OSTSTUKSA1156OSTU
DescriptionBipolar Transistors - BJT PNP SiliconBipolar Transistors - BJT PNP Silicon Short LeadsTRANS PNP 400V 0.5A TO-126
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-126-3TO-126-3-
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 400 V- 400 V-
Collector Base Voltage VCBO- 400 V- 400 V-
Emitter Base Voltage VEBO- 7 V- 7 V-
Collector Emitter Saturation Voltage- 1 V- 1 V- 1 V
Maximum DC Collector Current0.5 A0.5 A- 500 mA
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesKSA1156--
DC Current Gain hFE Max200200200
Height1.5 mm1.5 mm-
Length8 mm8 mm-
PackagingBulkTubeTube
Width3.25 mm3.25 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current- 0.5 A- 0.5 A- 0.5 A
DC Collector/Base Gain hfe Min3030-
Pd Power Dissipation1000 mW1000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25060-
SubcategoryTransistorsTransistors-
Unit Weight0.026843 oz0.026738 oz0.026843 oz
Part # Aliases-KSA1156OSTSTU_NL-
Package Case--TO-126
Pd Power Dissipation--1000 mW
Collector Emitter Voltage VCEO Max--- 400 V
Collector Base Voltage VCBO--- 400 V
Emitter Base Voltage VEBO--- 7 V
DC Collector Base Gain hfe Min--30
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		KSA1156OS Bipolar Transistors - BJT PNP Silicon
KSA1156OSTSTU Bipolar Transistors - BJT PNP Silicon Short Leads
ON Semiconductor
ON Semiconductor 		KSA1156OS TRANS PNP 400V 0.5A TO-126
KSA1156OSTU TRANS PNP 400V 0.5A TO-126
KSA1156OSTSTU TRANS PNP 400V 0.5A TO-126
KSA1156OST Nuevo y original
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