PartNumber | Jantxv2N2369AUB | Jantxv2N2369AUA | Jantxv2N2369AUA/TR |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Packaging | Waffle | Waffle | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | - | Si |
Mounting Style | - | - | SMD/SMT |
Package / Case | - | - | LCC-4 |
Transistor Polarity | - | - | NPN |
Configuration | - | - | Single |
Collector Emitter Voltage VCEO Max | - | - | 15 V |
Collector Base Voltage VCBO | - | - | 40 V |
Emitter Base Voltage VEBO | - | - | 4.5 V |
Collector Emitter Saturation Voltage | - | - | 0.2 V |
Maximum DC Collector Current | - | - | 0.1 A |
Minimum Operating Temperature | - | - | - 65 C |
Maximum Operating Temperature | - | - | + 200 C |
DC Current Gain hFE Max | - | - | 120 at 100 mA, 1 V |
DC Collector/Base Gain hfe Min | - | - | 20 at 100 mA, 1 V |
Pd Power Dissipation | - | - | 0.36 W |