PartNumber | Jantx2N3810 | Jantx2N3810L | Jantx2N3810/TR |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Packaging | Bulk | Bulk | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | - | Si |
Mounting Style | - | - | Through Hole |
Package / Case | - | - | TO-78-6 |
Transistor Polarity | - | - | PNP |
Configuration | - | - | Dual |
Collector Emitter Voltage VCEO Max | - | - | 60 V |
Collector Base Voltage VCBO | - | - | 60 V |
Emitter Base Voltage VEBO | - | - | 5 V |
Collector Emitter Saturation Voltage | - | - | 0.2 V |
Maximum DC Collector Current | - | - | 50 mA |
Minimum Operating Temperature | - | - | - 65 C |
Maximum Operating Temperature | - | - | + 200 C |
DC Current Gain hFE Max | - | - | 450 at 100 uA, 5 V |
DC Collector/Base Gain hfe Min | - | - | 100 at 10 uA, 5 V |
Pd Power Dissipation | - | - | 350 mW |