 | |  | |
| PartNumber | Jan2N3637 | Jan2N3637L | Jan2N3637/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Bulk | Tray | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | - | Si |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-205AD-3 |
| Transistor Polarity | - | - | PNP |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 175 V |
| Collector Base Voltage VCBO | - | - | 175 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| Collector Emitter Saturation Voltage | - | - | 0.3 V |
| Maximum DC Collector Current | - | - | 1 A |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 200 C |
| DC Current Gain hFE Max | - | - | 300 at - 50 mA, - 10 V |
| DC Collector/Base Gain hfe Min | - | - | 55 at 100 uA, 10 V |
| Pd Power Dissipation | - | - | 5 W |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jan2N3637 | Bipolar Transistors - BJT Small-Signal BJT | |
| JAN2N3637UB | Bipolar Transistors - BJT Small-Signal BJT | ||
| Jan2N3637L | Bipolar Transistors - BJT Small-Signal BJT | ||
| Jan2N3637/TR | Bipolar Transistors - BJT | ||
| Jan2N3637L/TR | Bipolar Transistors - BJT | ||
| JAN2N3637UB/TR | Bipolar Transistors - BJT |