Jan2N18

Jan2N1893 vs Jan2N1893S

 
PartNumberJan2N1893Jan2N1893S
DescriptionBipolar Transistors - BJT Power BJTBipolar Transistors - BJT Power BJT
ManufacturerMicrochipMicrochip
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSNN
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-5-3-
Transistor PolarityNPN-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max80 V-
Collector Base Voltage VCBO120 V-
Emitter Base Voltage VEBO7 V-
Collector Emitter Saturation Voltage500 mV-
Maximum DC Collector Current100 mA-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 200 C-
DC Current Gain hFE Max120 at 150mA, 10 VDC-
PackagingBulkBulk
BrandMicrochip / MicrosemiMicrochip / Microsemi
DC Collector/Base Gain hfe Min40 at 150 mA, 10 VDC-
Pd Power Dissipation800 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity11
SubcategoryTransistorsTransistors
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
Jan2N1893 Bipolar Transistors - BJT Power BJT
Jan2N1893S Bipolar Transistors - BJT Power BJT
JAN2N1893 Trans GP BJT NPN 80V 0.5A 3-Pin TO-5
JAN2N1893S TRANS NPN 80V 0.5A TO-39
JAN2N1871A SCRs Silicon Controlled Rectifie
JAN2N1872A Nuevo y original
JAN2N1890 Bipolar Transistors - BJT Power BJT
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