 |  | | |
| PartNumber | JANTXV2N3019S | JANTXV2N3019S/TR | JANTXV2N3019S CESE |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Packaging | Bulk | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-5-3 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 80 V | - |
| Collector Base Voltage VCBO | - | 140 V | - |
| Emitter Base Voltage VEBO | - | 7 V | - |
| Collector Emitter Saturation Voltage | - | 0.5 V | - |
| Maximum DC Collector Current | - | 1 A | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 300 at 500 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 15 at 1 A, 10 V | - |
| Pd Power Dissipation | - | 800 mW | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANTXV2N3019S | Bipolar Transistors - BJT Small-Signal BJT | |
| JANTXV2N3019S/TR | Bipolar Transistors - BJT | ||
| JANTXV2N3019S | Bipolar Transistors - BJT JANTXV2N3019S | ||
| JANTXV2N3019S CESE | Nuevo y original | ||
| JANTXV2N3019S/TR | Bipolar Transistors - BJT |