 |  | | |
| PartNumber | JANS2N3810L/TR | JANS2N3866A | JANS2N3868 |
| Description | Bipolar Transistors - BJT | Transistor NPN silicon high-frequency Transisto | Trans GP BJT PNP 60V 3A 3-Pin TO-5 - Trays (Alt: JANS2N3868) |
| Manufacturer | Microchip | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-78-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.25 V | - | - |
| Maximum DC Collector Current | 50 mA | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 600 | - | - |
| Brand | Microchip / Microsemi | - | - |
| Continuous Collector Current | 50 mA | - | - |
| DC Collector/Base Gain hfe Min | 150 | - | - |
| Pd Power Dissipation | 350 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANS2N3810L/TR | Bipolar Transistors - BJT | |
| JANS2N3866A | Transistor NPN silicon high-frequency Transisto | ||
| JANS2N3868 | Trans GP BJT PNP 60V 3A 3-Pin TO-5 - Trays (Alt: JANS2N3868) |