PartNumber | JAN2N4261 | JAN2N4261UB | JAN2N4261/TR |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Packaging | Bulk | Waffle | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | - | Si |
Mounting Style | - | - | Through Hole |
Package / Case | - | - | TO-72-3 |
Transistor Polarity | - | - | PNP |
Configuration | - | - | Single |
Collector Emitter Voltage VCEO Max | - | - | - 15 V |
Collector Base Voltage VCBO | - | - | - 15 V |
Emitter Base Voltage VEBO | - | - | - 4.5 V |
Collector Emitter Saturation Voltage | - | - | - 0.15 V |
Maximum DC Collector Current | - | - | - 30 mA |
Minimum Operating Temperature | - | - | - 65 C |
Maximum Operating Temperature | - | - | + 200 C |
DC Current Gain hFE Max | - | - | 150 at - 10 mA, - 1 V |
DC Collector/Base Gain hfe Min | - | - | 20 at - 30 mA, - 1 V |
Pd Power Dissipation | - | - | 200 mW |