 |  |  | |
| PartNumber | IXZH10N50L2B | IXZH08N120 | IXZH10N50L2A |
| Description | MOSFET IXZH10N50L2B 10A 500V TO-247 w/Substrate Linear RightGate | Z-MOS RF Power MOSFET | RF MOSFET N-CHANNEL TO-247 |
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247AD-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | - | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | IXZH10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 3.1 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 4 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXZH10N50L2B | MOSFET IXZH10N50L2B 10A 500V TO-247 w/Substrate Linear RightGate | |
| IXZH08N120 | Z-MOS RF Power MOSFET | ||
| IXZH10N50L2A | RF MOSFET N-CHANNEL TO-247 | ||
| IXZH10N50LA | Nuevo y original | ||
| IXZH10N50LB | Nuevo y original | ||
| IXZH10N50L2B | RF MOSFET N-CHANNEL TO-247 | ||
| IXZH16N60 | RF MOSFET 600V 18A TO-247 |