 | | | |
| PartNumber | IXYQ30N65B3D1 | IXYQ40N65B3D1 | IXYQ40N65C3D1 |
| Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Technology | Si | Si | Si |
| Package / Case | TO-3P-3 | TO-3P-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Collector Emitter Saturation Voltage | 1.8 V | 1.7 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 70 A | 86 A | - |
| Pd Power Dissipation | 270 W | 300 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Continuous Collector Current Ic Max | 160 A | 195 A | - |
| Brand | IXYS | IXYS | IXYS |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| RoHS | - | - | Y |
| Packaging | - | - | Tube |
| Tradename | - | - | XPT, GenX3 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXYQ30N65B3D1 | IGBT Transistors DISC IGBT XPT-GENX3 | |
| IXYQ40N65B3D1 | IGBT Transistors DISC IGBT XPT-GENX3 | ||
| IXYQ40N65C3D1 | IGBT Transistors | ||
| IXYQ40N65C3D1 | IGBT Transistors |