PartNumber | IXYP10N65B3D1 | IXYP10N65C3D1 | IXYP10N65C3D1M |
Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-220AB/FP | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | - |
Product | Diode Power Modules | - | - |
Type | GenX3 | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-220-3 | - | TO-220-3 |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Packaging | Tube | Tube | - |
Configuration | Single | - | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | - | - |
Fall Time | 30 ns | - | - |
Id Continuous Drain Current | 32 A | - | - |
Pd Power Dissipation | 160 W | - | 53 W |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
Rise Time | 29 ns | - | - |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
Tradename | XPT | XPT, GenX3 | - |
Typical Turn Off Delay Time | 125 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Technology | - | Si | Si |
Series | - | Planar | - |
Collector Emitter Voltage VCEO Max | - | - | 650 V |
Collector Emitter Saturation Voltage | - | - | 2.27 V |
Maximum Gate Emitter Voltage | - | - | 20 V |
Continuous Collector Current at 25 C | - | - | 15 A |
Continuous Collector Current Ic Max | - | - | 50 A |
Gate Emitter Leakage Current | - | - | 100 nA |