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IXTY4N

IXTY4N65X2 vs IXTY4N65X2 TRL vs IXTY4N60P

 
PartNumberIXTY4N65X2IXTY4N65X2 TRLIXTY4N60P
DescriptionMOSFET DISCMSFT NCHULTRAJNCTN X2CLASSIGBT Transistors MOSFET PolarHV Power MOSFET
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance850 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge8.3 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation80 W--
ConfigurationSingle--
Channel ModeEnhancement-Enhancement
TradenameHiPerFET-PolarHV
PackagingTube-Tube
SeriesX2-Class-IXTY4N60
BrandIXYS--
Forward Transconductance Min2.5 S--
Fall Time25 ns-20 ns
Product TypeMOSFET--
Rise Time28 ns-10 ns
Factory Pack Quantity70--
SubcategoryMOSFETs--
Typical Turn Off Delay Time57 ns-50 ns
Typical Turn On Delay Time22 ns-25 ns
Unit Weight0.081130 oz-0.081130 oz
Package Case--TO-252-3
Pd Power Dissipation--89 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--4 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--5.5 V
Rds On Drain Source Resistance--2 Ohms
Qg Gate Charge--13 nC
Forward Transconductance Min--2.8 S
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse 		IXTY4N65X2-TRL Discrete Semiconductor Modules X2-Class Power MOSFET
IXTY4N65X2 MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
IXTY4N65X2 TRL Nuevo y original
IXTY4N65X2 MOSFET N-CH 650V 4A X2 TO-252
IXTY4N60P IGBT Transistors MOSFET PolarHV Power MOSFET
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