 |  |  | |
| PartNumber | IXTY18P10T-TRL | IXTY18P10T | IXTY18P10T TRL |
| Description | Discrete Semiconductor Modules TrenchP Power MOSFET | MOSFET -100V -18A | IXTY18P10T TRL |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | TrenchP | - | - |
| Vgs Gate Source Voltage | 15 V | 15 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Reel | Tube | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Fall Time | 22 ns | 22 ns | - |
| Id Continuous Drain Current | - 18 A | 18 A | - |
| Pd Power Dissipation | 83 W | 83 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 120 mOhms | 120 mOhms | - |
| Rise Time | 26 ns | 26 ns | - |
| Factory Pack Quantity | 2500 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | TrenchP | - | - |
| Typical Turn Off Delay Time | 44 ns | 44 ns | - |
| Typical Turn On Delay Time | 19 ns | 19 ns | - |
| Vds Drain Source Breakdown Voltage | - 100 V | 100 V | - |
| Vgs th Gate Source Threshold Voltage | - 4.5 V | 4.5 V | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Qg Gate Charge | - | 39 nC | - |
| Channel Mode | - | Enhancement | - |
| Series | - | IXTY18P10 | - |
| Transistor Type | - | 1 P-Channel | - |
| Forward Transconductance Min | - | 13 S | - |
| Unit Weight | - | 0.081130 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXTY18P10T-TRL | Discrete Semiconductor Modules TrenchP Power MOSFET | |
| IXTY18P10T | MOSFET -100V -18A | ||
| IXTY18P10T TRL | IXTY18P10T TRL | ||
| IXTY18P10T | IGBT Transistors MOSFET -100V -18A |