PartNumber | IXTX660N04T4 | IXTX600N04T2 | IXTX60N50L2 |
Description | Discrete Semiconductor Modules Disc MSFT NChTrenchGate-Gen4 TO-247AD | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET 60 Amps 500V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | MOSFET Gate Drivers | - |
Type | TrenchGate-Gen4 | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | PLUS-247 | PLUS-247-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Packaging | Tube | Tube | Tube |
Configuration | Single | - | - |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | - | N-Channel |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Technology | - | Si | Si |
Pd Power Dissipation | - | 1250 W | - |
Tradename | - | HiPerFET | LinearL2 |
Series | - | IXTX600N04 | IXTX60N50 |
Fall Time | - | 250 ns | - |
Rise Time | - | 20 ns | - |
Unit Weight | - | 0.232808 oz | 0.056438 oz |
Vds Drain Source Breakdown Voltage | - | - | 500 V |
Id Continuous Drain Current | - | - | 60 A |
Rds On Drain Source Resistance | - | - | 100 mOhms |