PartNumber | IXTX46N50L | IXTX400N15X4 | IXTX40P50P |
Description | MOSFET 44 Amps 500V | MOSFET DISCMSFT NCH HIPERFET-Q CLASS | Darlington Transistors MOSFET -40.0 Amps -500V 0.230 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | PLUS-247-3 | PLUS247 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 150 V | - |
Id Continuous Drain Current | 46 A | 400 A | - |
Rds On Drain Source Resistance | 160 mOhms | 3.1 mOhms | - |
Vgs th Gate Source Threshold Voltage | 6 V | 4.5 V | - |
Vgs Gate Source Voltage | 30 V | 20 V | - |
Qg Gate Charge | 260 nC | 430 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Pd Power Dissipation | 700 W | 1.5 kW | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | - | Tube |
Height | 21.34 mm | - | - |
Length | 16.13 mm | - | - |
Series | IXTX46N50 | X4-Class | IXTX40P50 |
Transistor Type | 1 N-Channel | - | - |
Type | Linear Power MOSFET | - | - |
Width | 5.21 mm | - | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 7 S | - | - |
Fall Time | 42 ns | 8 ns | 34 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 50 ns | 22 ns | 59 ns |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 80 ns | 180 ns | 90 ns |
Typical Turn On Delay Time | 40 ns | 40 ns | 37 ns |
Unit Weight | 0.257500 oz | - | 0.257500 oz |
Tradename | - | HiPerFET | PolarP |
Package Case | - | - | TO-247-3 |
Pd Power Dissipation | - | - | 890 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | - 40 A |
Vds Drain Source Breakdown Voltage | - | - | - 500 V |
Vgs th Gate Source Threshold Voltage | - | - | - 4 V |
Rds On Drain Source Resistance | - | - | 230 mOhms |
Qg Gate Charge | - | - | 205 nC |
Forward Transconductance Min | - | - | 23 S |