PartNumber | IXTX120N65X2 | IXTX110N20L2 | IXTX120P20T |
Description | Discrete Semiconductor Modules DiscMSFT NChUltraJnctn X2Class TO-247AD | MOSFET LINEAR L2 SERIES MOSFET 200V 110A | MOSFET TrenchP Power MOSFETs |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | X2-Class | LinearL2 Power MOSFET | TrenchP Power MOSFET |
Vgs Gate Source Voltage | 30 V | 20 V | 15 V |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | PLUS-247-3 | PLUS-247-3 | PLUS-247-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | - | - |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | P-Channel |
Fall Time | 10 ns | 135 ns | 50 ns |
Id Continuous Drain Current | 120 A | 110 A | 120 A |
Pd Power Dissipation | 1250 W | 960 W | 1.04 kW |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 23 mOhms | 24 mOhms | 30 mOhms |
Rise Time | 24 ns | 100 ns | 85 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | PLUS247 | LinearL2 | TrenchP |
Typical Turn Off Delay Time | 87 ns | 33 ns | 200 ns |
Typical Turn On Delay Time | 32 ns | 40 ns | 90 ns |
Vds Drain Source Breakdown Voltage | 650 V | 200 V | 200 V |
Vgs th Gate Source Threshold Voltage | 3 V | 4.5 V | 4.5 V |
Technology | - | Si | Si |
Qg Gate Charge | - | 500 nC | 740 nC |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 21.34 mm | 21.34 mm |
Length | - | 16.13 mm | 16.13 mm |
Series | - | IXTX110N20 | IXTX120P20 |
Width | - | 5.21 mm | 5.21 mm |
Forward Transconductance Min | - | 55 S | 85 S |
Unit Weight | - | 0.257500 oz | 0.056438 oz |