IXTQ50 stock, IXTQ50, IXTQ50N20P


PartNumber	IXTQ50N20P	IXTQ50N25T	IXTQ50N20PM
Description	MOSFET 50 Amps 200V 0.06 Rds	MOSFET 50Amps 250V
Manufacturer	IXYS	IXYS	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-3P-3	TO-3P-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	200 V	250 V	-
Id Continuous Drain Current	50 A	50 A	-
Rds On Drain Source Resistance	60 mOhms	60 mOhms	-
Vgs th Gate Source Threshold Voltage	5 V	5 V	-
Vgs Gate Source Voltage	20 V	30 V	-
Qg Gate Charge	70 nC	78 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 150 C	-
Pd Power Dissipation	360 W	400 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	PolarHT	HiPerFET	-
Packaging	Tube	Tube	-
Height	20.3 mm	20.3 mm	-
Length	15.8 mm	15.8 mm	-
Series	IXTQ50N20	IXTQ50N25	-
Transistor Type	1 N-Channel	1 N-Channel	-
Type	PolarHT Power MOSFET	Trench Gate Power MOSFET	-
Width	4.9 mm	4.9 mm	-
Brand	IXYS	IXYS	-
Forward Transconductance Min	12 S	35 S	-
Fall Time	30 ns	25 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	35 ns	25 ns	-
Factory Pack Quantity	30	30	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	70 ns	47 ns	-
Typical Turn On Delay Time	26 ns	14 ns	-
Unit Weight	0.194007 oz	0.056438 oz	-

Search Part Number : "IXTQ50", Match & Start with "IXTQ50" - Total : 6

Fabricante	Parte #	Descripción
Littelfuse	IXTQ50N20P	MOSFET 50 Amps 200V 0.06 Rds
Littelfuse	IXTQ50N25T	MOSFET 50Amps 250V
	IXTQ50N20PM	Nuevo y original
	IXTQ50N25T1000	Nuevo y original
	IXTQ50N25T	IGBT Transistors MOSFET 50Amps 250V
	IXTQ50N20P	IGBT Transistors MOSFET 50 Amps 200V 0.06 Rds

IXTQ50