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| PartNumber | IXTQ130N20T | IXTQ130N10T | IXTQ130N10 |
| Description | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3) | MOSFET 130 Amps 100V 8.5 Rds | |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | Trench | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-3P | TO-3P-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 22 ns | 28 ns | 28 ns |
| Id Continuous Drain Current | 130 A | 130 A | - |
| Pd Power Dissipation | 830 W | 360 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 16 mOhms | 8.5 mOhms | - |
| Rise Time | 18 ns | 47 ns | 47 ns |
| Factory Pack Quantity | 50 | 30 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | Trench | HiPerFET | - |
| Typical Turn Off Delay Time | 57 ns | 44 ns | 44 ns |
| Typical Turn On Delay Time | 25 ns | 30 ns | 30 ns |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 20.3 mm | - |
| Length | - | 15.8 mm | - |
| Series | - | IXTQ130N10 | IXTQ130N10 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 4.9 mm | - |
| Unit Weight | - | 0.194007 oz | 0.194007 oz |
| Package Case | - | - | TO-3P-3 |
| Pd Power Dissipation | - | - | 360 W |
| Id Continuous Drain Current | - | - | 130 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 8.5 mOhms |