PartNumber | IXTN170P10P | IXTN17N120L | IXTN17N100L |
Description | Discrete Semiconductor Modules -170.0 Amps -100V 0.012 Rds | MOSFET 17 Amps 1200V | |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | MOSFET | - |
RoHS | Y | Y | - |
Type | Polar Power MOSFET | Linear Power MOSFET | - |
Mounting Style | Screw Mount | Chassis Mount | - |
Package / Case | SOT-227-4 | SOT-227-4 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | IXTN170P10 | IXTN17N120 | - |
Packaging | Tube | Tube | - |
Brand | IXYS | IXYS | - |
Product Type | Discrete Semiconductor Modules | MOSFET | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
Tradename | PolarP | Linear | - |
Unit Weight | 1.058219 oz | 1.058219 oz | - |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 1.2 kV | - |
Id Continuous Drain Current | - | 15 A | - |
Rds On Drain Source Resistance | - | 900 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 6 V | - |
Vgs Gate Source Voltage | - | 30 V | - |
Qg Gate Charge | - | 155 nC | - |
Pd Power Dissipation | - | 540 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Height | - | 12.22 mm | - |
Length | - | 38.23 mm | - |
Transistor Type | - | 1 N-Channel | - |
Width | - | 25.42 mm | - |
Forward Transconductance Min | - | 3.5 S | - |
Fall Time | - | 83 ns | - |
Rise Time | - | 31 ns | - |
Typical Turn Off Delay Time | - | 110 ns | - |
Typical Turn On Delay Time | - | 42 ns | - |