 | |  | |
| PartNumber | IXTK170P10P | IXTK170N10P | IXTK170P10 |
| Description | MOSFET -170.0 Amps -100V 0.012 Rds | MOSFET 170 Amps 100V 0.009 Ohm Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-264-3 | TO-264-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 170 A | 170 A | - |
| Rds On Drain Source Resistance | 14 mOhms | 9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 240 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 890 W | 714 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Series | IXTK170P10 | IXTK170N10 | - |
| Transistor Type | 1 P-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 35 S | - | - |
| Fall Time | 45 ns | 33 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 75 ns | 50 ns | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 82 ns | 90 ns | - |
| Typical Turn On Delay Time | 32 ns | 35 ns | - |
| Unit Weight | 0.352740 oz | 0.352740 oz | - |
| Height | - | 26.59 mm | - |
| Length | - | 20.29 mm | - |
| Width | - | 5.31 mm | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXTK170P10P | MOSFET -170.0 Amps -100V 0.012 Rds | |
| IXTK170N10P | MOSFET 170 Amps 100V 0.009 Ohm Rds | ||
| IXTK170P10 | Nuevo y original | ||
| IXTK170P10P | MOSFET P-CH 100V 170A TO-264 | ||
| IXTK170N10P | MOSFET 170 Amps 100V 0.009 Ohm Rds |