IXTK120N2

IXTK120N20P vs IXTK120N25 vs IXTK120N20

 
PartNumberIXTK120N20PIXTK120N25IXTK120N20
DescriptionMOSFET 120 Amps 200V 0.022 RdsMOSFET 120 Amps 250V 0.020 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V250 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance22 mOhms20 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge152 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation714 W730 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePolarHT--
PackagingTubeTube-
Height26.16 mm26.16 mm-
Length19.96 mm19.96 mm-
SeriesIXTK120N20IXTK120N25-
Transistor Type1 N-Channel1 N-Channel-
TypePolarHT Power MOSFET--
Width5.13 mm5.13 mm-
BrandIXYSIXYS-
Forward Transconductance Min40 S--
Fall Time31 ns35 ns-
Product TypeMOSFETMOSFET-
Rise Time35 ns38 ns-
Factory Pack Quantity2530-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 ns175 ns-
Typical Turn On Delay Time30 ns35 ns-
Unit Weight0.352740 oz0.352740 oz-
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXTK120N25P MOSFET 120 Amps 250V 0.024 Rds
IXTK120N20P MOSFET 120 Amps 200V 0.022 Rds
IXTK120N25 MOSFET 120 Amps 250V 0.020 Rds
IXTK120N20 Nuevo y original
IXTK120N25P Darlington Transistors MOSFET 120 Amps 250V 0.024 Rds
IXTK120N25 MOSFET 120 Amps 250V 0.020 Rds
IXTK120N20P MOSFET 120 Amps 200V 0.022 Rds
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