PartNumber | IXTH6N90A. | IXTH6N90A | IXTH6N90 |
Description | MOSFET 6 Amps 900V 1.4 Rds | MOSFET 6 Amps 900V 1.8 Rds | |
Manufacturer | - | IXYS | N/A |
Product Category | - | Transistors - FETs, MOSFETs - Single | FETs - Single |
Series | - | IXTH6N90 | IXTH6N90 |
Packaging | - | Tube | Tube |
Unit Weight | - | 6500 g | 6500 g |
Mounting Style | - | Through Hole | Through Hole |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Configuration | - | Single | Single |
Package Case | - | TO-247-3 | TO-247-3 |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Pd Power Dissipation | - | 180 W | 180 W |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Fall Time | - | 60 ns | 60 ns |
Rise Time | - | 40 ns | 40 ns |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 6 A | 6 A |
Vds Drain Source Breakdown Voltage | - | 900 V | 900 V |
Rds On Drain Source Resistance | - | 1.4 Ohms | 1.8 Ohms |
Transistor Polarity | - | N-Channel | N-Channel |
Typical Turn Off Delay Time | - | 100 ns | 100 ns |
Typical Turn On Delay Time | - | 35 ns | 35 ns |
Channel Mode | - | Enhancement | Enhancement |