PartNumber | IXTH62N65X2 | IXTH62N25T | IXTH62N25 |
Description | Discrete Semiconductor Modules DiscMSFT NChUltraJnctn X2Class TO-247AD | MOSFET 62 Amps 250V 50 Rds | |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | MOSFET | - |
RoHS | Y | Y | - |
Product | Power MOSFET Modules | - | - |
Type | X2-Class | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tube | Tube | - |
Configuration | Single | - | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | N-Channel | - |
Fall Time | 5 ns | - | - |
Id Continuous Drain Current | 62 A | 62 A | - |
Pd Power Dissipation | 780 W | - | - |
Product Type | Discrete Semiconductor Modules | MOSFET | - |
Rds On Drain Source Resistance | 50 mOhms | 50 Ohms | - |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
Tradename | HiPerFET | - | - |
Typical Turn Off Delay Time | 56 ns | - | - |
Typical Turn On Delay Time | 28 ns | - | - |
Vds Drain Source Breakdown Voltage | 650 V | 250 V | - |
Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
Technology | - | Si | - |
Series | - | IXTH62N25 | - |
Unit Weight | - | 0.229281 oz | - |