| PartNumber | IXTH30N50L2 | IXTH30N50 | IXTH30N50L |
| Description | MOSFET 30.0 Amps 500V 0.002 Rds | MOSFET 30 Amps 500V 0.17 Rds | MOSFET 30 Amps 500V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
| Id Continuous Drain Current | 30 A | 30 A | 30 A |
| Rds On Drain Source Resistance | 200 mOhms | 170 mOhms | 200 mOhms |
| Vgs th Gate Source Threshold Voltage | 4.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 240 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 400 W | 360 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | Linear L2 | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | - |
| Length | 16.26 mm | 16.26 mm | - |
| Series | IXTH30N50 | IXTH30N50 | IXTH30N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Linear L2 Power MOSFET | - | - |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 9 S | - | - |
| Fall Time | 40 ns | 26 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 117 ns | 42 ns | - |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 94 ns | 110 ns | - |
| Typical Turn On Delay Time | 35 ns | 35 ns | - |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |