 |  |  | |
| PartNumber | IXTA36N20T | IXTA36N30 | IXTA36N30P |
| Description | MOSFET 36 Amps 200V 60 Rds | IGBT Transistors MOSFET MOSFET N-CH 300V 36A | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 36 A | - | - |
| Rds On Drain Source Resistance | 60 Ohms | - | - |
| Configuration | Single | - | Single |
| Packaging | Tube | - | Tube |
| Series | IXTA36N20 | - | IXTA36N30 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | IXYS | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.056438 oz | - | 0.056438 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 300 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 28 ns |
| Rise Time | - | - | 30 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 36 A |
| Vds Drain Source Breakdown Voltage | - | - | 300 V |
| Rds On Drain Source Resistance | - | - | 110 mOhms |
| Typical Turn Off Delay Time | - | - | 97 ns |
| Typical Turn On Delay Time | - | - | 24 ns |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXTA36N20T | MOSFET 36 Amps 200V 60 Rds | |
| IXTA36N30T | MOSFET 36 Amps 300V 110 Rds | ||
| IXTA36N30P-TRL | MOSFET IXTA36N30P TRL | ||
| IXTA36N30 | Nuevo y original | ||
| IXTA36N30PTRL | Nuevo y original | ||
| IXTA36N30P-TRL | IXTA36N30P-TRL | ||
| IXTA36N30P | IGBT Transistors MOSFET MOSFET N-CH 300V 36A | ||
| IXTA36N30T | MOSFET 36 Amps 300V 110 Rds | ||
| IXTA36N20T | MOSFET 36 Amps 200V 60 Rds |