IXGH32N1

IXGH32N170 vs IXGH32N120A3 vs IXGH32N100A3

 
PartNumberIXGH32N170IXGH32N120A3IXGH32N100A3
DescriptionIGBT Transistors 72 Amps 1700 V 3.3 V RdsIGBT Transistors 32 Amps 1200VIGBT Transistors 32 Amps 1000V
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247AD-3TO-247AD-3-
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1700 V1200 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXGH32N170IXGH32N120GenX3
PackagingTubeTubeTube
Continuous Collector Current Ic Max75 A75 A-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.229281 oz0.229281 oz1.340411 oz
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247AD (IXGH)
Power Max--300W
Reverse Recovery Time trr---
Current Collector Ic Max--75A
Voltage Collector Emitter Breakdown Max--1000V
IGBT Type--PT
Current Collector Pulsed Icm--200A
Vce on Max Vge Ic--2.2V @ 15V, 32A
Switching Energy--2.6mJ (on), 9.5mJ (off)
Gate Charge--87nC
Td on off 25°C--24ns/385ns
Test Condition--800V, 32A, 10 Ohm, 15V
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXGH32N170 IGBT Transistors 72 Amps 1700 V 3.3 V Rds
IXGH32N170A IGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A
IXGH32N120A3 IGBT Transistors 32 Amps 1200V
IXGH32N100A3 IGBT Transistors 32 Amps 1000V
IXGH32N120A3 IGBT Transistors 32 Amps 1200V
IXGH32N170A IGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A
IXGH32N170 IGBT Transistors 72 Amps 1700 V 3.3 V Rds
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