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IXFT26N5

IXFT26N50 vs IXFT26N50Q TR vs IXFT26N50Q

 
PartNumberIXFT26N50IXFT26N50Q TRIXFT26N50Q
DescriptionMOSFET 26 Amps 500V 0.23 RdsMOSFET N-CH 500V 26A TO268MOSFET 26 Amps 500V 0.2 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-268-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current26 A--
Rds On Drain Source Resistance200 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET-HyperFET
PackagingTube-Tube
Height5.1 mm--
Length16.05 mm--
SeriesIXFT26N50-IXFT26N50
Transistor Type1 N-Channel-1 N-Channel
Width14 mm--
BrandIXYS--
Fall Time30 ns-16 ns
Product TypeMOSFET--
Rise Time33 ns-30 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns-55 ns
Typical Turn On Delay Time16 ns-28 ns
Unit Weight0.158733 oz-0.158733 oz
Package Case--TO-268-2
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--26 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--200 mOhms
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse 		IXFT26N50 MOSFET 26 Amps 500V 0.23 Rds
IXFT26N50Q TR MOSFET N-CH 500V 26A TO268
IXFT26N50 MOSFET 26 Amps 500V 0.23 Rds
IXFT26N50Q MOSFET 26 Amps 500V 0.2 Rds
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