IXFR32

IXFR32N100Q3 vs IXFR32N80P vs IXFR32N100P

 
PartNumberIXFR32N100Q3IXFR32N80PIXFR32N100P
DescriptionMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23AMOSFET 20 Amps 800V 0.29 RdsMOSFET 32 Amps 1000V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1 kV800 V1 kV
Id Continuous Drain Current23 A20 A18 A
Rds On Drain Source Resistance350 mOhms290 mOhms340 mOhms
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge195 nC150 nC-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation570 W300 W320 W
ConfigurationSingleSingleSingle
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
SeriesIXFR32N100IXFR32N80IXFR32N100
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Product TypeMOSFETMOSFETMOSFET
Rise Time300 ns24 ns55 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.056438 oz0.056438 oz0.056438 oz
Vgs th Gate Source Threshold Voltage-5 V-
Minimum Operating Temperature-- 55 C- 55 C
Channel Mode-EnhancementEnhancement
Height-21.34 mm21.34 mm
Length-16.13 mm16.13 mm
Type-PolarHV HiPerFET Power MOSFET-
Width-5.21 mm5.21 mm
Forward Transconductance Min-23 S-
Fall Time-24 ns43 ns
Typical Turn Off Delay Time-85 ns76 ns
Typical Turn On Delay Time-30 ns50 ns
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXFR32N100Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A
IXFR32N80Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
IXFR32N80P MOSFET 20 Amps 800V 0.29 Rds
IXFR32N100P MOSFET 32 Amps 1000V
IXFR32N50 MOSFET N-CH ISOPLUS247
IXFR32N100Q3 MOSFET N-CH 1000V 23A ISOPLUS247
IXFR32N80P Darlington Transistors MOSFET 20 Amps 800V 0.29 Rds
IXFR32N50Q MOSFET 30 Amps 500V 0.15 Rds
IXFR32N80Q3 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
IXFR32N100P MOSFET 32 Amps 1000V
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